document number: 81297 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.2, 02-jul-09 1 high speed infrared emitting diode, 830 nm, gaalas double hetero TSHG8400 vishay semiconductors description TSHG8400 is an infrared, 830 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a clear, untinted plastic package. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? peak wavelength: p = 830 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 22 ? low forward voltage ? suitable for high pulse current operation ? high modulation bandwidth: f c = 18 mhz ? good spectral matching with cmos cameras ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? infrared radiation source for operation with cmos cameras (illumination) ? high speed ir data transmission note test conditions see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 3 8 9 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) TSHG8400 70 22 830 20 ordering information ordering code packaging remarks package form TSHG8400 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power dissipation p v 180 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm soldered on pcb r thja 230 k/w
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81297 2 rev. 1.2, 02-jul-09 TSHG8400 vishay semiconductors high speed infrared emitting diode, 830 nm, gaalas double hetero fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature note t amb = 25 c, unless otherwise specified 0 20 40 60 8 0 100 120 140 160 1 8 0 200 010203040506070 8 0 90 100 21142 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 230 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 21143 i f - for w ard c u rrent (ma) r thja = 230 k/ w basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.5 1.8 v i f = 1 a, t p = 100 s v f 2.3 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 45 70 135 mw/sr i f = 1 a, t p = 100 s i e 700 mw/sr radiant power i f = 100 ma, t p = 20 ms e 50 mw temperature coefficient of e i f = 100 ma tk e - 0.35 %/k angle of half intensity ? 22 deg peak wavelength i f = 100 ma p 830 nm spectral bandwidth i f = 100 ma ? 40 nm temperature coefficient of p i f = 100 ma tk p 0.25 nm/k rise time i f = 100 ma t r 20 ns fall time i f = 100 ma t f 13 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 18 mhz virtual source diameter d 3.7 mm
document number: 81297 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.2, 02-jul-09 3 TSHG8400 high speed infrared emitting diode, 830 nm, gaalas double hetero vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - relative radiant power vs. wavelength fig. 8 - relative radiant intensity vs. angular displacement 100 1000 0.01 0.1 1 10 100 t p - p u lse d u ration (ms) 16031 t p /t = 0.01 0.05 0.2 0.5 0.1 0.02 t am b < 50 c i f - for w ard c u rrent (ma) 1 88 73 i f - for w ard c u rrent (ma) 1000 100 10 1 v f - for w ard v oltage ( v ) 024 t p = 100 s t p /t = 0.001 13 0.1 1 10 100 1000 1 10 100 1000 1 8 220 i f - for w ard c u rrent (ma) i e - radiant intensity (m w /sr) 0.1 1 10 100 1000 11 0 100 1000 16971 i f for w ard c u rrent (ma) - radiant po w er (m w ) e 740 8 00 - w a v elength (nm) 900 16972_1 0 0.25 0.5 0.75 1.0 1.25 e, rel - relati v e radiant po w er 94 888 3 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 0 0.2 0.4 i e rel - relati v e radiant intensity ? - ang u lar displacement
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81297 4 rev. 1.2, 02-jul-09 TSHG8400 vishay semiconductors high speed infrared emitting diode, 830 nm, gaalas double hetero package dimensions in millimeters 34.3 0.55 0.5 + 0.15 - 0.05 ? 5 0.15 area not plane technical dra w ings according to di n specifications 8 .7 0.3 2.54 nom. 1 min. < 0.7 0.5 + 0.15 - 0.05 a c ? 5. 8 0.15 7.7 0.15 0.6 + 0.2 - 0.1 r 2.49 (sphere) (3.5) dra w ing- n o.: 6.544-5259.06-4 iss u e: 6; 19.05.09 19257
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